Usachev Nikolay Aleksandrovich

A graduate of electronics from National Research Nuclear University MEPhI (NRNU MEPhI, Electronic Department) in 2010. He received the Ph.D. degrees in NRNU MEPhI in 2015. In 2010, he joined ENPO SPELS and NRNU MEPhI, where he has been a Microwave Engineer. Since 2019, he has been the Head of the Design Center. His research interests include radiation effects in semiconductor ICs and devices, design and investigation of a CMOS and SiGe BiCMOS microwave transceivers ICs with a frequency range up to 30 GHz, microwave amplifiers, switches and digital step attenuators and frequency converters implemented in GaAs pHEMT / HBT and GaN HEMT technologies processes.

Reports:

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«Development of a microwave VLSI for trusted applications in the "foundry" mode: current status problems, and development trends»
urrent status and development trends of microwave «system on chip» (SoC) and «system in package» (SiP) integrated circuits (ICs) with a frequency range up to 100 GHz intended for telecommunication (including new radio), self-driving vehicle radar, digital radio-frequency marking and identification, and navigation applications. It is shown that the nowadays microwave transceivers implemented in SoC and SiP form-factor contain a receiver and transceiver path, frequency synthesizer, digital and control path, microprocessor core, and memory. The main trends in Microwave SoC and SiP design are decreasing the gate length of MOS-transistor, using all technology processes (CMOS / SOI CMOS, SiGe BiCMOS, GaAs pHEMT/HBT, GaN HEMT), the transformation of transceiver architecture from classical superheterodyne to software-defined radio (SDR).
The analysis of domestic Design Centers (DS) achievements and problems caused by a microwave VLSI development in «foundry» mode have been presented. It’s shown that domestic DC’s product range consists of VLSI transceivers with a frequency range up to 5 GHz, frequency synthesizers with output frequencies up to 12 GHz implemented in CMOS / SOI CMOS process 250…40 nm and SiGe BiCMOS processes 420…130 nm; amplifiers, voltage-controlled oscillators, up-and down-converters, controlled attenuators, and phase shifters microwave ICs, with operating frequencies up to 50 GHz implemented in GaAs pHEMT and GaN HEMT processes 0,5…0,1 μm. The full set of verified IP-blocks required for VLSI transceiver development. Two domestic semiconductor foundries provide the access to CMOS/SOI CMOS (250…180 nm, «Micron») and GaAs pHEMT 0,5 μm («Svetlana-Rost») technology processes suitable for the development of microwave ICs.
The scientific and methodological platform for problem-oriented design and a distribution center of competence and services to consumers, manufacturers, and developers of electronics, which provides loading of domestic semiconductor foundries with requests from domestic design centers, reducing the time and cost of developing competitive VLSIs and electronic equipment for telecommunication, self-driving vehicle, digital radio-frequency marking and identification, and navigation applications is proposed.